Electric Circuits

Use different alloy types available commercially following standardized testing methodologies assuming production variables are negligible.

Replicate samples with consistent proportions of main constituents passed through identical production processes under homogeneous temperature conditions followed by precision-instrumented resistance measurements.

Test samples collected after subjecting to various heat treatments anticipating chemical composition remains stable throughout.

Conduct basic visual inspections followed by Ohm's law calculations neglecting microstructural differences induced by composition variations.

The resistance remains the same.

The resistance decreases by a factor of three.

The resistance increases by a factor of nine.

The resistance triples.

Coulomb (C)

Volt (V)

Ampere (A)

Ohm (Ω)

The resistance halves.

The resistance quadruples.

The resistance doubles.

The resistance remains unchanged.

Compare resistivity at room temperature to that at boiling point without controlling environmental conditions or accounting for possible impurities in the material.

Observe changes in current with varying temperatures while keeping voltage constant, disregarding semiconductor properties like band gap energy.

Measure resistivity at various temperatures, ensuring constant dimensions and contact resistance, while considering error from thermal expansion and voltmeter sensitivity.

Record resistance changes under different light intensities, assuming that temperature remains constant without actual temperature measurements.

It halves.

It remains unchanged.

It doubles.

It quadruples.

Current

Voltage and Current

Voltage

Resistance

$R = \frac{L}{\rho A}$

$R = \rho \left( \frac{A}{L} \right)$

$R = \rho \left( \frac{L}{A} \right)$

$R = \frac{A}{\rho L}$

The combined resistance decreases as now the semiconductor between the wires allows much higher current to pass through more easily than before.

The total resistance stays the same with the addition of the semiconductor not significantly impacting the behavior of the parallel electrical network.

The potential resistance drops significantly in direct proportion to the quantity of charge carriers available within the semiconductor material.

The initial resistance increases due to the presence of a semiconductor with a larger band gap and decreased electron mobility.

It remains unchanged.

It decreases by a factor of 6.

It increases by a factor of 6.

It increases by a factor of 12.